Download Transformer-Based Design Techniques for Oscillators and by Howard Cam Luong, Jun Yin PDF

By Howard Cam Luong, Jun Yin

This booklet offers in-depth assurance of transformer-based layout options that let CMOS oscillators and frequency dividers to accomplish cutting-edge functionality. layout, optimization, and measured functionality of oscillators and frequency dividers for various functions are mentioned intimately, concentrating on not just ultra-low offer voltage but additionally ultra-wide frequency tuning diversity and locking variety. This publication could be a useful reference for a person operating or attracted to CMOS radio-frequency or mm-Wave built-in circuits and systems.

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Transformer-Based Design Techniques for Oscillators and Frequency Dividers

This publication offers in-depth insurance of transformer-based layout strategies that let CMOS oscillators and frequency dividers to accomplish state of the art functionality. layout, optimization, and measured functionality of oscillators and frequency dividers for various functions are mentioned intimately, concentrating on not just ultra-low offer voltage but in addition ultra-wide frequency tuning diversity and locking variety.

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Which has a unit of “decibels below the carrier per Hertz” or dBc/Hz. ð3:7Þ 24 3 Design Considerations for CMOS Voltage-Controlled Oscillators (VCOs) Sfn ( f ) Ssig( f ) ∗ −f0 0 f f0 Sout( f ) = f 0 Ssig ( f )+ Ssig( f ) ∗Sfn( f ) −f0 0 f0 f Fig. 3 Frequency spectrum of a real oscillator Sout (f) Fig. 3 LC-Tank Properties As shown in Fig. 5a, an LC resonant tank is made of an inductor L and a capacitor C with their resistive loss modeled by a parallel tank resistor Rp. 3b), the resonant frequency ω0 is 1 ω0 ¼ 2π f 0 ¼ pffiffiffiffiffiffiffi LC ð3:9Þ From Fig.

Lee, T. H. (2004). ). New York: Cambridge University Press. 6. html. 7. cc¼MO& lc¼eng. 8. com/Products/Simulation+Technology/Electronics/Signal+Integrity/ ANSYS+HFSS. 9. Pozar, D. M. (2012). ). Hoboken, NJ: Wiley. 10. Toso, S. , Dalt, N. , & Neviani, A. (2010). 06 mm2 11 mW local oscillator for the GSM standard in 65 nm CMOS. IEEE Journal of SolidState Circuits, 45, 1295–1304. 11. , Groves, R. , & Zamdmer, N. D. (2003). Frequency-independent equivalent-circuit model for on-chip spiral inductors.

However, when V0 is large enough, MT enters the triode region during the period when either Vout+ or VoutÀ is close to its 36 3 Design Considerations for CMOS Voltage-Controlled Oscillators (VCOs) a b Vout Vout Vout+ Vout+ Vout− t I MT in triode region Vout− t I IM2 IM2 IM1 IM1 t t Fig. 13 Voltage and current waveforms in (a) the current-limited region and (b) the voltagelimited region minimum amplitude as shown in Fig. 13b. Eventually V0 approaches its maximum value, which is around 2VDD1 for the NMOS LC-VCO in Fig.

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