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Which has a unit of “decibels below the carrier per Hertz” or dBc/Hz. ð3:7Þ 24 3 Design Considerations for CMOS Voltage-Controlled Oscillators (VCOs) Sfn ( f ) Ssig( f ) ∗ −f0 0 f f0 Sout( f ) = f 0 Ssig ( f )+ Ssig( f ) ∗Sfn( f ) −f0 0 f0 f Fig. 3 Frequency spectrum of a real oscillator Sout (f) Fig. 3 LC-Tank Properties As shown in Fig. 5a, an LC resonant tank is made of an inductor L and a capacitor C with their resistive loss modeled by a parallel tank resistor Rp. 3b), the resonant frequency ω0 is 1 ω0 ¼ 2π f 0 ¼ pffiffiffiffiffiffiffi LC ð3:9Þ From Fig.

Lee, T. H. (2004). ). New York: Cambridge University Press. 6. html. 7. cc¼MO& lc¼eng. 8. com/Products/Simulation+Technology/Electronics/Signal+Integrity/ ANSYS+HFSS. 9. Pozar, D. M. (2012). ). Hoboken, NJ: Wiley. 10. Toso, S. , Dalt, N. , & Neviani, A. (2010). 06 mm2 11 mW local oscillator for the GSM standard in 65 nm CMOS. IEEE Journal of SolidState Circuits, 45, 1295–1304. 11. , Groves, R. , & Zamdmer, N. D. (2003). Frequency-independent equivalent-circuit model for on-chip spiral inductors.

However, when V0 is large enough, MT enters the triode region during the period when either Vout+ or VoutÀ is close to its 36 3 Design Considerations for CMOS Voltage-Controlled Oscillators (VCOs) a b Vout Vout Vout+ Vout+ Vout− t I MT in triode region Vout− t I IM2 IM2 IM1 IM1 t t Fig. 13 Voltage and current waveforms in (a) the current-limited region and (b) the voltagelimited region minimum amplitude as shown in Fig. 13b. Eventually V0 approaches its maximum value, which is around 2VDD1 for the NMOS LC-VCO in Fig.

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