By Tom Gourdie
This e-book offers a letter-by-letter research of the entire vital alphabets utilized by today's calligraphers.
Read Online or Download Calligraphic Styles PDF
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Extra resources for Calligraphic Styles
Sample text
5 COMMENT LPCVD DEPOSITION STEP TYPE=OXID,TEMP=905,TIME=60 SAVE FILE=DL026,TYPE=B END Fig. 8 SUPREM input for the sourcejdrain profile Process Simulation 39 SOURCE/DRAIN PROFILE SIMULATION OF N-CHANNEL MOSFET LPCVD DEPOSITION ! 0 MINUTES. DEPTH ! 03 I 14 CONCENTRATION (LOG ATOMS/CC) 15 16 17 18 19 20 *--------------------------------------------------------------! * ! * ! * ! * ! * ! I .. 00 ----------------------------- ---------------------------*---*! ! * ! 40 * ! ! ! ! ----------------*--- --------- --------------------------------!
Digest, Philadelphia, pp. llO-lll, 1974. 5] J. J. Barnes and R. J. Lomax, " Two-Dimensional Finite Element Simulation of Semiconductor Devices," Electron. , 10, 8 Aug 1974, pp. 341-343. 6] P. E. Cottrell and E. M. Buturla, " Steady-state Analysis of Field Effect Transistors via the Finite Element Method," I EDM Tech. Digest, Dec 1975, pp. 51-54. 7] T. Toyabe, K. Yamaguchi, S. Asai, and M. S. Mock, "A Numerical Model of Avalanche Breakdown in MOSFETs," IEEE Trans. on Electron Devices, ED-25, July 1978, pp.
29) where the effective diffusivity Deff is assumed to be independent of 55 Process Simulation oxidant concentration C or stress as in the linear-parabolic model. Boundary conditions for Eq. 30) where F is the oxidant flux and n is a unit vector normal to the oxide surface (positive in the outward direction from the oxide bulk). The boundaries Sl, S2 and S3 are the oxide/silicon interface, free-oxide surface, and nitride boundary, respectively, as defined in Fig. 17. These non-homogeneous conditions cause the oxidant distribution at the silicon/oxide interfacetobe non-uniform when a nitride layer is involved as in Eqs.